hh_cond_exp_destexhe_neuron
hh_cond_exp_destexhe - Hodgin Huxley based model, Traub, Destexhe and Mainen modified
Description
hh_cond_exp_destexhe is an implementation of a modified Hodkin-Huxley model, which is based on the hh_cond_exp_traub model.
Differences to hh_cond_exp_traub:
Additional background noise: A background current whose conductances were modeled as an Ornstein-Uhlenbeck process is injected into the neuron.
Additional non-inactivating K+ current: A non-inactivating K+ current was included, which is responsible for spike frequency adaptation.
References
See also
hh_cond_exp_traub
Copyright statement
This file is part of NEST.
Copyright (C) 2004 The NEST Initiative
NEST is free software: you can redistribute it and/or modify it under the terms of the GNU General Public License as published by the Free Software Foundation, either version 2 of the License, or (at your option) any later version.
NEST is distributed in the hope that it will be useful, but WITHOUT ANY WARRANTY; without even the implied warranty of MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE. See the GNU General Public License for more details.
You should have received a copy of the GNU General Public License along with NEST. If not, see <http://www.gnu.org/licenses/>.
Parameters
Name |
Physical unit |
Default value |
Description |
|---|---|---|---|
g_Na |
nS |
17318.0nS |
Na Conductance |
g_K |
nS |
3463.6nS |
K Conductance |
g_L |
nS |
15.5862nS |
Leak Conductance |
C_m |
pF |
346.36pF |
Membrane capacitance |
E_Na |
mV |
60mV |
Reversal potential |
E_K |
mV |
-90mV |
Potassium reversal potential |
E_L |
mV |
-80mV |
Leak reversal potential (a.k.a. resting potential) |
V_T |
mV |
-58mV |
Voltage offset that controls dynamics. For default |
tau_syn_exc |
ms |
2.7ms |
parameters, V_T = -63mV results in a threshold around -50mV.Synaptic time constant for excitatory synapse |
tau_syn_inh |
ms |
10.5ms |
Synaptic time constant for inhibitory synapse |
E_exc |
mV |
0mV |
Excitatory synaptic reversal potential |
E_inh |
mV |
-75mV |
Inhibitory synaptic reversal potential |
g_M |
nS |
173.18nS |
Conductance of non-inactivating K+ channel |
g_noise_exc0 |
uS |
0.012uS |
Conductance OU noiseMean of the excitatory noise conductance |
g_noise_inh0 |
uS |
0.057uS |
Mean of the inhibitory noise conductance |
sigma_noise_exc |
uS |
0.003uS |
Standard deviation of the excitatory noise conductance |
sigma_noise_inh |
uS |
0.0066uS |
Standard deviation of the inhibitory noise conductance |
alpha_n_init |
1 / ms |
0.032 / (ms * mV) * (15mV - V_m) / (exp((15mV - V_m) / 5mV) - 1) |
|
beta_n_init |
1 / ms |
0.5 / ms * exp((10mV - V_m) / 40mV) |
|
alpha_m_init |
1 / ms |
0.32 / (ms * mV) * (13mV - V_m) / (exp((13mV - V_m) / 4mV) - 1) |
|
beta_m_init |
1 / ms |
0.28 / (ms * mV) * (V_m - 40mV) / (exp((V_m - 40mV) / 5mV) - 1) |
|
alpha_h_init |
1 / ms |
0.128 / ms * exp((17mV - V_m) / 18mV) |
|
beta_h_init |
1 / ms |
(4 / (1 + exp((40mV - V_m) / 5mV))) / ms |
|
alpha_p_init |
1 / ms |
0.0001 / (ms * mV) * (V_m + 30mV) / (1 - exp(-(V_m + 30mV) / 9mV)) |
|
beta_p_init |
1 / ms |
-0.0001 / (ms * mV) * (V_m + 30mV) / (1 - exp((V_m + 30mV) / 9mV)) |
|
refr_T |
ms |
2ms |
Duration of refractory period |
I_e |
pA |
0pA |
constant external input current |
State variables
Name |
Physical unit |
Default value |
Description |
|---|---|---|---|
g_noise_exc |
uS |
g_noise_exc0 |
|
g_noise_inh |
uS |
g_noise_inh0 |
|
V_m |
mV |
E_L |
Membrane potential |
V_m_old |
mV |
E_L |
Membrane potential at the previous timestep |
refr_t |
ms |
0ms |
Refractory period timer |
Act_m |
real |
alpha_m_init / (alpha_m_init + beta_m_init) |
|
Act_h |
real |
alpha_h_init / (alpha_h_init + beta_h_init) |
|
Inact_n |
real |
alpha_n_init / (alpha_n_init + beta_n_init) |
|
Noninact_p |
real |
alpha_p_init / (alpha_p_init + beta_p_init) |
Equations
Source code
The model source code can be found in the NESTML models repository here: hh_cond_exp_destexhe_neuron.