hh_cond_exp_destexhe_neuron

hh_cond_exp_destexhe - Hodgin Huxley based model, Traub, Destexhe and Mainen modified

Description

hh_cond_exp_destexhe is an implementation of a modified Hodkin-Huxley model, which is based on the hh_cond_exp_traub model.

Differences to hh_cond_exp_traub:

  1. Additional background noise: A background current whose conductances were modeled as an Ornstein-Uhlenbeck process is injected into the neuron.

  2. Additional non-inactivating K+ current: A non-inactivating K+ current was included, which is responsible for spike frequency adaptation.

References

See also

hh_cond_exp_traub

Parameters

Name

Physical unit

Default value

Description

g_Na

nS

17318.0nS

Na Conductance

g_K

nS

3463.6nS

K Conductance

g_L

nS

15.5862nS

Leak Conductance

C_m

pF

346.36pF

Membrane capacitance

E_Na

mV

60mV

Reversal potential

E_K

mV

-90mV

Potassium reversal potential

E_L

mV

-80mV

Leak reversal potential (a.k.a. resting potential)

V_T

mV

-58mV

Voltage offset that controls dynamics. For default

tau_syn_exc

ms

2.7ms

parameters, V_T = -63mV results in a threshold around -50mV.Synaptic time constant for excitatory synapse

tau_syn_inh

ms

10.5ms

Synaptic time constant for inhibitory synapse

E_exc

mV

0mV

Excitatory synaptic reversal potential

E_inh

mV

-75mV

Inhibitory synaptic reversal potential

g_M

nS

173.18nS

Conductance of non-inactivating K+ channel

g_noise_exc0

uS

0.012uS

Conductance OU noiseMean of the excitatory noise conductance

g_noise_inh0

uS

0.057uS

Mean of the inhibitory noise conductance

sigma_noise_exc

uS

0.003uS

Standard deviation of the excitatory noise conductance

sigma_noise_inh

uS

0.0066uS

Standard deviation of the inhibitory noise conductance

alpha_n_init

1 / ms

0.032 / (ms * mV) * (15mV - V_m) / (exp((15mV - V_m) / 5mV) - 1)

beta_n_init

1 / ms

0.5 / ms * exp((10mV - V_m) / 40mV)

alpha_m_init

1 / ms

0.32 / (ms * mV) * (13mV - V_m) / (exp((13mV - V_m) / 4mV) - 1)

beta_m_init

1 / ms

0.28 / (ms * mV) * (V_m - 40mV) / (exp((V_m - 40mV) / 5mV) - 1)

alpha_h_init

1 / ms

0.128 / ms * exp((17mV - V_m) / 18mV)

beta_h_init

1 / ms

(4 / (1 + exp((40mV - V_m) / 5mV))) / ms

alpha_p_init

1 / ms

0.0001 / (ms * mV) * (V_m + 30mV) / (1 - exp(-(V_m + 30mV) / 9mV))

beta_p_init

1 / ms

-0.0001 / (ms * mV) * (V_m + 30mV) / (1 - exp((V_m + 30mV) / 9mV))

refr_T

ms

2ms

Duration of refractory period

I_e

pA

0pA

constant external input current

State variables

Name

Physical unit

Default value

Description

g_noise_exc

uS

g_noise_exc0

g_noise_inh

uS

g_noise_inh0

V_m

mV

E_L

Membrane potential

V_m_old

mV

E_L

Membrane potential at the previous timestep

refr_t

ms

0ms

Refractory period timer

Act_m

real

alpha_m_init / (alpha_m_init + beta_m_init)

Act_h

real

alpha_h_init / (alpha_h_init + beta_h_init)

Inact_n

real

alpha_n_init / (alpha_n_init + beta_n_init)

Noninact_p

real

alpha_p_init / (alpha_p_init + beta_p_init)

Equations

\[\frac{ dV_{m} } { dt }= \frac 1 { C_{m} } \left( { (-I_{Na} - I_{K} - I_{M} - I_{L} - I_{syn,exc} - I_{syn,inh} + I_{e} + I_{stim} - I_{noise}) } \right)\]
\[\frac{ drefr_{t} } { dt }= \frac{ -1000.0 \cdot \mathrm{ms} } { \mathrm{s} }\]
\[\frac{ dAct_{m} } { dt }= (\alpha_{m} - (\alpha_{m} + \beta_{m}) \cdot Act_{m})\]
\[\frac{ dAct_{h} } { dt }= (\alpha_{h} - (\alpha_{h} + \beta_{h}) \cdot Act_{h})\]
\[\frac{ dInact_{n} } { dt }= (\alpha_{n} - (\alpha_{n} + \beta_{n}) \cdot Inact_{n})\]
\[\frac{ dNoninact_{p} } { dt }= (\alpha_{p} - (\alpha_{p} + \beta_{p}) \cdot Noninact_{p})\]

Source code

The model source code can be found in the NESTML models repository here: hh_cond_exp_destexhe_neuron.