hh_cond_exp_destexhe
hh_cond_exp_destexhe - Hodgin Huxley based model, Traub, Destexhe and Mainen modified
Description
hh_cond_exp_destexhe is an implementation of a modified Hodkin-Huxley model, which is based on the hh_cond_exp_traub model.
Differences to hh_cond_exp_traub:
Additional background noise: A background current whose conductances were modeled as an Ornstein-Uhlenbeck process is injected into the neuron.
Additional non-inactivating K+ current: A non-inactivating K+ current was included, which is responsible for spike frequency adaptation.
References
See also
hh_cond_exp_traub
Parameters
Name |
Physical unit |
Default value |
Description |
---|---|---|---|
g_Na |
nS |
17318.0nS |
Na Conductance |
g_K |
nS |
3463.6nS |
K Conductance |
g_L |
nS |
15.5862nS |
Leak Conductance |
C_m |
pF |
346.36pF |
Membrane Capacitance |
E_Na |
mV |
60mV |
Reversal potentials |
E_K |
mV |
-90.0mV |
Potassium reversal potential |
E_L |
mV |
-80.0mV |
Leak reversal Potential (aka resting potential) |
V_T |
mV |
-58.0mV |
Voltage offset that controls dynamics. For default |
tau_syn_exc |
ms |
2.7ms |
parameters, V_T = -63mV results in a threshold around -50mV.Synaptic Time Constant Excitatory Synapse |
tau_syn_inh |
ms |
10.5ms |
Synaptic Time Constant for Inhibitory Synapse |
E_exc |
mV |
0.0mV |
Excitatory synaptic reversal potential |
E_inh |
mV |
-75.0mV |
Inhibitory synaptic reversal potential |
g_M |
nS |
173.18nS |
Conductance of non-inactivating K+ channel |
g_noise_exc0 |
uS |
0.012uS |
Conductance OU noiseMean of the excitatory noise conductance |
g_noise_inh0 |
uS |
0.057uS |
Mean of the inhibitory noise conductance |
sigma_noise_exc |
uS |
0.003uS |
Standard deviation of the excitatory noise conductance |
sigma_noise_inh |
uS |
0.0066uS |
Standard deviation of the inhibitory noise conductance |
alpha_n_init |
1 / ms |
0.032 / (ms * mV) * (15.0mV - V_m) / (exp((15.0mV - V_m) / 5.0mV) - 1.0) |
|
beta_n_init |
1 / ms |
0.5 / ms * exp((10.0mV - V_m) / 40.0mV) |
|
alpha_m_init |
1 / ms |
0.32 / (ms * mV) * (13.0mV - V_m) / (exp((13.0mV - V_m) / 4.0mV) - 1.0) |
|
beta_m_init |
1 / ms |
0.28 / (ms * mV) * (V_m - 40.0mV) / (exp((V_m - 40.0mV) / 5.0mV) - 1.0) |
|
alpha_h_init |
1 / ms |
0.128 / ms * exp((17.0mV - V_m) / 18.0mV) |
|
beta_h_init |
1 / ms |
(4.0 / (1.0 + exp((40.0mV - V_m) / 5.0mV))) / ms |
|
alpha_p_init |
1 / ms |
0.0001 / (ms * mV) * (V_m + 30.0mV) / (1.0 - exp(-(V_m + 30.0mV) / 9.0mV)) |
|
beta_p_init |
1 / ms |
-0.0001 / (ms * mV) * (V_m + 30.0mV) / (1.0 - exp((V_m + 30.0mV) / 9.0mV)) |
|
refr_T |
ms |
2ms |
Duration of refractory period |
I_e |
pA |
0pA |
constant external input current |
State variables
Name |
Physical unit |
Default value |
Description |
---|---|---|---|
g_noise_exc |
uS |
g_noise_exc0 |
|
g_noise_inh |
uS |
g_noise_inh0 |
|
V_m |
mV |
E_L |
Membrane potential |
V_m_old |
mV |
E_L |
Membrane potential at the previous timestep |
refr_t |
ms |
0ms |
Refractory period timer |
is_refractory |
boolean |
false |
|
Act_m |
real |
alpha_m_init / (alpha_m_init + beta_m_init) |
|
Act_h |
real |
alpha_h_init / (alpha_h_init + beta_h_init) |
|
Inact_n |
real |
alpha_n_init / (alpha_n_init + beta_n_init) |
|
Noninact_p |
real |
alpha_p_init / (alpha_p_init + beta_p_init) |
Equations
Source code
The model source code can be found in the NESTML models repository here: hh_cond_exp_destexhe.