wb_cond_exp
wb_cond_exp - Wang-Buzsaki model
Description
wb_cond_exp is an implementation of a modified Hodkin-Huxley model.
Post-synaptic currents: Incoming spike events induce a post-synaptic change of conductance modeled by an exponential function.
Spike Detection: Spike detection is done by a combined threshold-and-local- maximum search: if there is a local maximum above a certain threshold of the membrane potential, it is considered a spike.
References
See Also
hh_cond_exp_traub, wb_cond_multisyn
Parameters
Name |
Physical unit |
Default value |
Description |
---|---|---|---|
t_ref |
ms |
2ms |
Refractory period |
g_Na |
nS |
3500nS |
Sodium peak conductance |
g_K |
nS |
900nS |
Potassium peak conductance |
g_L |
nS |
10nS |
Leak conductance |
C_m |
pF |
100pF |
Membrane capacitance |
E_Na |
mV |
55mV |
Sodium reversal potential |
E_K |
mV |
-90mV |
Potassium reversal potential |
E_L |
mV |
-65mV |
Leak reversal potential (aka resting potential) |
V_Tr |
mV |
-55mV |
Spike threshold |
tau_syn_exc |
ms |
0.2ms |
Rise time of the excitatory synaptic alpha function |
tau_syn_inh |
ms |
10ms |
Rise time of the inhibitory synaptic alpha function |
E_exc |
mV |
0mV |
Excitatory synaptic reversal potential |
E_inh |
mV |
-75mV |
Inhibitory synaptic reversal potential |
I_e |
pA |
0pA |
constant external input current |
State variables
Name |
Physical unit |
Default value |
Description |
---|---|---|---|
r |
integer |
0 |
number of steps in the current refractory phase |
V_m |
mV |
E_L |
Membrane potential |
Inact_h |
real |
alpha_h_init / (alpha_h_init + beta_h_init) |
|
Act_n |
real |
alpha_n_init / (alpha_n_init + beta_n_init) |
Equations
Source code
The model source code can be found in the NESTML models repository here: wb_cond_exp.