terub_gpe
terub_gpe - Terman Rubin neuron model
Description
terub_gpe is an implementation of a spiking neuron using the Terman Rubin model based on the Hodgkin-Huxley formalism.
Post-syaptic currents: Incoming spike events induce a post-synaptic change of current modelled by an alpha function. The alpha function is normalised such that an event of weight 1.0 results in a peak current of 1 pA.
Spike Detection: Spike detection is done by a combined threshold-and-local-maximum search: if there is a local maximum above a certain threshold of the membrane potential, it is considered a spike.
References
Parameters
Name |
Physical unit |
Default value |
Description |
---|---|---|---|
E_L |
mV |
-55mV |
Resting membrane potential |
g_L |
nS |
0.1nS |
Leak conductance |
C_m |
pF |
1pF |
Capacitance of the membrane |
E_Na |
mV |
55mV |
Sodium reversal potential |
g_Na |
nS |
120nS |
Sodium peak conductance |
E_K |
mV |
-80.0mV |
Potassium reversal potential |
g_K |
nS |
30.0nS |
Potassium peak conductance |
E_Ca |
mV |
120mV |
Calcium reversal potential |
g_Ca |
nS |
0.15nS |
Calcium peak conductance |
g_T |
nS |
0.5nS |
T-type Calcium channel peak conductance |
g_ahp |
nS |
30nS |
Afterpolarization current peak conductance |
tau_syn_exc |
ms |
1ms |
Rise time of the excitatory synaptic alpha function |
tau_syn_inh |
ms |
12.5ms |
Rise time of the inhibitory synaptic alpha function |
E_gg |
mV |
-100mV |
Reversal potential for inhibitory input (from GPe) |
t_ref |
ms |
2ms |
Refractory time |
I_e |
pA |
0pA |
constant external input current |
State variables
Name |
Physical unit |
Default value |
Description |
---|---|---|---|
r |
integer |
0 |
counts number of ticks during the refractory period |
V_m |
mV |
E_L |
Membrane potential |
gate_h |
real |
0.0 |
gating variable h |
gate_n |
real |
0.0 |
gating variable n |
gate_r |
real |
0.0 |
gating variable r |
Ca_con |
real |
0.0 |
gating variable r |
Equations
Source code
The model source code can be found in the NESTML models repository here: terub_gpe.